參數(shù)資料
型號： MJD340
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： High Voltage Power Transistors(高電壓功率晶體管)
中文描述： 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, CASE 369C, DPAK-3
文件頁數(shù)： 4/8頁
文件大?。?/td> 98K
代理商： MJD340
MJD340 MJD350
http://onsemi.com
4
I
1000
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
20
30
50
70
100
200
500
300
500
μ
s
Figure 6. Active Region Safe Operating Area
200 300
500 700 1000
100
20
50
30
10
2
5
3
1 ms
dc
100
μ
s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 7. Power Derating
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
T
A
T
C
T
C
T
A
(SURFACE MOUNT)
相關(guān)PDF資料
PDF描述
MJD44E3 Darlington Power Transistor(達林頓功率晶體管)
MJD44H11 Complementary Power Transistors(互補型功率晶體管)
MJD45H11 Complementary Power Transistors(互補功率晶體管)
MJD50 High Voltage Power Transistors(高電壓功率晶體管)
MJE170 Complementary Plastic Silicon Power Transistors(互補型硅功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD340_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJD340_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Voltage Power Transistors
MJD340-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD340-13 功能描述:兩極晶體管 - BJT HIGH VOLTAGE NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD340G 功能描述:兩極晶體管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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