參數(shù)資料
型號: MJE16002AF
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 12/65頁
文件大?。?/td> 502K
代理商: MJE16002AF
MJE16002 MJE16004
3–689
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
VCEO(sus)
450
Vdc
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
0.25
1.5
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 , TC = 100_C)
ICER
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 17 or 18
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 19
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.2 Adc)
MJE16002
(IC = 1.5 Adc, IB = 0.15 Adc)
MJE16004
(IC = 3.0 Adc, IB = 0.4 Adc)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc)
MJE16004
(IC = 3.0 Adc, IB = 0.4 Adc, TC = 100_C)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C)
MJE16004
VCE(sat)
1.0
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.4 Adc)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc)
MJE16004
(IC = 3.0 Adc, IS = 0.4 Adc, TC = 100_C)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C)
MJE16004
VBE(sat)
1.5
Vdc
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
MJE16002
MJE16004
hFE
5.0
7.0
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
200
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
MJE16002/MJH10002
Delay Time
td
30
100
ns
Rise Time
(IC = 3.0 Adc,
(IB2 = 0.8 Adc,
tr
100
300
Storage Time
VCC = 250 Vdc,
IB1 =0 4Adc
( B2
RB2 = 8.0 )
ts
1000
3000
Fall Time
IB1 = 0.4 Adc,
PW = 30
s,
tf
60
300
Storage Time
Duty Cycle
v 2.0%)
(VBE(off) = 5 0 Vdc)
ts
400
Fall Time
(VBE(off) = 5.0 Vdc)
tf
130
Resistive Load (Table 1)
MJE16004/MJH16004
Delay Time
td
30
100
ns
Rise Time
(IC = 3.0 Adc,
(IB2 = 0.6 Adc,
tr
130
300
Storage Time
VCC = 250 Vdc,
IB1 =0 3Adc
( B2
RB2 = 8.0 )
ts
800
2700
Fall Time
IB1 = 0.3 Adc,
PW = 30
s,
tf
80
350
Storage Time
Duty Cycle
v 2.0%)
(VBE(off) = 5 0 Vdc)
ts
250
Fall Time
(VBE(off) = 5.0 Vdc)
tf
60
(1) Pulse Test: PW = 300
s, Duty Cycle v 2%.
*
βf =
IC
IB1
相關(guān)PDF資料
PDF描述
MJE16004BD 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16002BD 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16002BV 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16004BS 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16002BC 5 A, 450 V, NPN, Si, POWER TRANSISTOR
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