參數(shù)資料
型號: MJE16002BC
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 45/65頁
文件大?。?/td> 502K
代理商: MJE16002BC
MJE16002 MJE16004
3–692
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMPS)
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
IC, COLLECTOR CURRENT (AMPS)
t c
,C
ROSSO
V
ER
T
IME
(
ns)
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
Figure 11. Crossover Time
Figure 12. Crossover Time
2.0
3.0
2.0
3.0
t c
,CROSSOVER
TIME
(ns)
– 2.0 V
0 V
VBE(off) = 0 V
VBE(off) = 2.0 V
βf = 5
TJ = 75°C
VCC = 20 V
– 5.0 V
VBE(off) = 5.0 V
– 2.0 V
0 V
VBE(off) = 0 V
VBE(off) = 2.0 V
βf = 10
TJ = 75°C
VCC = 20 V
– 5.0 V
VBE(off) = 5.0 V
TYPICAL DYNAMIC CHARACTERISTICS (continued)
TIME
VCE
90% IB1
tsv
IC pk
VCE(pk)
90% VCE(pk)
90% IC(pk)
tc
10% VCE(pk)
10%
IC pk
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
0
5.0
4.0
7.0
8.0
2.0
0
2.0
1.0
5.0
4.0
3.0
1.0
3.0
6.0
Figure 13. Inductive Switching Measurements
Figure 14. Peak Reverse Base Current
IB1 = 0.6 A
IC = 3.0 A
TJ = 25°C
I B2
,REVERSE
BASE
CURRENT
(AMPS)
Figure 15. Thermal Response (MJE16002 and MJE16004)
t, TIME (ms)
1
0.01
0.2
0.1
0.05
0.02
0.05
1
2
5
10
20
50
100
200
500
R
θJC(t) = r(t) RθJC
R
θJC = 156°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.5
0.2
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.5
0.3
0.03
0.02
1 k
0.7
0.07
IC
IB
2% IC
trv
tfi
tti
IB1 = 0.3 A
TYPICAL ELECTRICAL CHARACTERISTICS
相關(guān)PDF資料
PDF描述
MJE16004AK 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16004AU 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16002AU 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16002BU 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE16002BA 5 A, 450 V, NPN, Si, POWER TRANSISTOR
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