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參數(shù)資料
| 型號： | MJE16004AJ |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 63/65頁 |
| 文件大?。?/td> | 502K |
| 代理商： | MJE16004AJ |
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MJE16002 MJE16004
3–694
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 16 is based on TC = 25_C; TJ(pk) is vari-
able depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figures 17 and 18 may be found at any
case temperature by using the appropriate curve on Figure
20.
TJ(pk) may be calculated from the data in Figure 15. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe 0perating Area
and represents the voltage–current condition allowable pull-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 17 gives the RBSOA character-
istics.
H.P. 214
or Equiv.
P.G.
50
RB = 33
*IB
*IC
T.U.T.
RL
VCC
VCC = 250 Vdc
RL = 83
IC = 3.0 Adc
IB = 0.3 Adc
*Tektronix
*P–6042 or
*Equivalent
Vin
0 V
≈ 11 V
tr ≤ 15 ns
H.P. 214
or Equiv.
P.G.
0 V
≈ –35 V
ts and tf
td and tr
50
500
1.0
F
10
F
+
–
100
20
+ Vdc
≈ 11 Vdc
0.02
F
A
RB1
RB2
2N5337
2N6191
–V
100
0.02
F
RL
VCC
T.U.T.
*IC
*IB
A
0 V
+V
–5 V
VCC = 250
RL = 83
IC = 3.0 Adc
Note: Adjust – V to obtain desired VBE(off) at Point A.
IB1 = 0.3 Adc
IB2 = 0.6 Adc
For VBE(off) = 5.0 V
RB1 = 33
RB2 = 8.0
RB2 = 0
50
Table 1. Resistive Load Switching
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