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參數(shù)資料
| 型號(hào)： | MJE16204 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS 6.0 AMPERES 550 VOLTS-. VCES 45 AND 80 WATTS |
| 中文描述： | 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 276K |
| 代理商： | MJE16204 |
1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJE16204 is a state–of–the–art SWITCHMODE
bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very resolution, full page, monochrome monitors.
550 Volt Collector–Base Breakdown Capability
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
Application Specific State–of–the–Art Die Design
Isolated or Non–Isolated TO–220 Type Packages
Fast Switching:
65 ns Inductive Fall Time (Typ)
680 ns Inductive Storage Time (Typ)
Low Saturation Voltage:
0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive
Low Collector–Emitter Leakage Current — 100
μ
A Max at 550 Volts — VCES
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
Per Fig. 14
Collector–Emitter Sustaining Voltage
250
Vdc
Emitter–Base Voltage
RMS Isolation Voltage(2)
VISOL
8.0
—
Vdc
V
— Pulsed (1)
ICM
IB
8.0
Base Current — Continuous
2.0
Adc
Total Power Dissipation
@ TC = 100 C
Derated above TC = 25 C
32
Operating and Storage Temperature Range
TJ, Tstg
–55 to 150
W/ C
C
THERMAL CHARCTERISTICS
Characteristic
Symbol
JC
Max
Unit
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
(2) Proper strike and creepage distance must be provided.
* Measurement made with thermocouple contacting the bottom insulated mounting surface of the
package (in a location beneath the die), the device mounted on a heatsink thermal grease applied,
and a mounting torque of 6 to 8 in lbs.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SCANSWITCH, SWITCHMODE and Designer’s are trademarks of Motorola, Inc.
10%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE16204/D
POWER TRANSISTORS
6.0 AMPERES
550 VOLTS — VCES
45 AND 80 WATTS
CASE 221A–06
TO–220AB
MJE16204
(REPLACES MJF16204)
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| MJE170 | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE171 | 功能描述:兩極晶體管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE171_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS |
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