參數(shù)資料
型號: MJE3055TDW
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 10 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 12/59頁
文件大小: 357K
代理商: MJE3055TDW
MJE2955T MJE3055T
3–629
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)
VCEO(sus)
60
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
700
Adc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
1.0
5.0
mAdc
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
1.0
10
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
100
Collector–Emitter Saturation Voltage (1)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
1.1
8.0
Vdc
Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
2.0
MHz
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 20%.
0
TC, CASE TEMPERATURE (°C)
75
100
175
25
50
Figure 2. DC Current Gain
125
150
500
0.01
Figure 3. Power Derating
IC, COLLECTOR CURRENT (AMP)
5.0
0.02
0.05
0.1
0.2
1.0
2.0
10
0.5
300
200
100
50
30
90
0
80
60
40
70
50
h
FE
,DC
C
URREN
T
GAIN
20
10
5.0
TJ = 150°C
25
°C
–55
°C
VCE = 2.0 V
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
30
10
20
MJE3055T
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
10
0.2 0.3
2.0 3.0
Figure 4. “On” Voltages
2.0
0
1.6
1.2
0.8
V,
V
OL
TAGE
(
V
OL
T
S
)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
10
0.2 0.3
2.0
3.0
1.4
0
1.2
1.0
0.8
V
,VOL
TAGE
(VOL
TS)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
MJE3055T
0.6
0.2
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