- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98022 > MJE5851AS (ON SEMICONDUCTOR) 8 A, 350 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJE5851AS |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 350 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 56/63頁 |
| 文件大小： | 445K |
| 代理商： | MJE5851AS |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁當前第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁
MJE5850 MJE5851 MJE5852
3–649
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.
I C
,COLLECT
OR
CURRENT
(AMPS)
I C
,COLLECT
OR
CURRENT
(AMPS)
7.0
0
1.0
100
300
500
3.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
5 ms
100
s
dc
20
7.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.05
10
400
5.0
2.0
10
1.0
0.2
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
20
40
70 100
Figure 12. Maximum Forward Bias
Safe Operating Area
TC = 25°C
Figure 13. RBSOA, Maximum Reverse Bias
Safe Operating Area
0.5
0.02
300
200
400
500
IC/IB = 4
VBE(off) = 2 V to 8 V
TJ = 100°C
MJE5850
MJE5851
MJE5852
8.0
2.0
4.0
6.0
MJE5850
MJE5851
MJE5852
200
1 ms
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 12 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case tem-
perature by using the appropriate curve on Figure 15.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 13 gives the RBSOA character-
istics.
Figure 14. Peak Reverse Base Current
Figure 15. Forward Bias Power Derating
IC = 4 A
IB1 = 1 A
TJ = 25°C
TC, CASE TEMPERATURE (°C)
0
40
120
160
0.6
POWER
DERA
TING
FACT
OR
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
0
1.0
26
8
2.5
3.5
3.0
2.0
1.5
4
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
I B2(pk)
(AMPS
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE5851AN | 8 A, 350 V, PNP, Si, POWER TRANSISTOR |
| MJE5850BD | 8 A, 300 V, PNP, Si, POWER TRANSISTOR |
| MJE5850AJ | 8 A, 300 V, PNP, Si, POWER TRANSISTOR |
| MJE5851BD | 8 A, 350 V, PNP, Si, POWER TRANSISTOR |
| MJE5850DW | 8 A, 300 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE5851G | 功能描述:兩極晶體管 - BJT 8A 350V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5852 | 功能描述:兩極晶體管 - BJT PNP High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5852_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE PNP POWER TRANSISTOR |
| MJE5852G | 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE6040 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
發(fā)布緊急采購，3分鐘左右您將得到回復。