參數(shù)資料
型號(hào)： MJE700
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NPN (HIGH DC CURRENT GAIN)
中文描述： npn型（高直流電流增益）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 51K
代理商： MJE700
2001 Fairchild Semiconductor Corporation
M
Rev. A1, February 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area
Figure 6. Power Derating
-0
-1
-2
-3
-4
-5
-0
-1
-2
-3
-4
-5
I
B
= -400
μ
s
I
B
= -300
μ
s
I
B
= -1000
μ
s
I
B
= -900
μ
s
I
B
= -800
μ
s
I
B
= -700
μ
s
I
B
= -600
μ
s
I
B
= -500
μ
s
I
B
= -200
μ
s
I
B
= -100
μ
s
I
C
(
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
-0.01
-0.1
-1
-10
10
100
1k
10k
V
CE
= -3V
h
F
,
I
C
[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
-0.1
-1
-10
-100
I
C
= 500 I
B
V
CE
(sat)
V
BE
(sat)
V
B
(
C
(
I
C
[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
-100
1
10
100
1000
f=0.1MHZ
I
E
=0
C
o
[
V
CB
[V], COLLECTOR-BASE VOLTAGE
-1
-10
-100
-1000
-0.1
-1
-10
-100
MJE702/703
DC
5ms
1ms
MJE700/701
100
μ
s
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
P
C
[
T
C
[
o
C], CASE TEMPERATURE
相關(guān)PDF資料
PDF描述
MJE701 NPN (HIGH DC CURRENT GAIN)
MJE700 DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE700T DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE700 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE700T 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE700_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE700G 功能描述:達(dá)林頓晶體管 4A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE700STU 功能描述:達(dá)林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE700T 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE701 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor
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