參數(shù)資料
型號: MJE803
廠商: 意法半導體
英文描述: SILICON NPN POWER DARLINGTON TRANSISTORS
中文描述: 硅NPN電源達林頓晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 64K
代理商: MJE803
MJE802
MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The
MJE802
and
epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in
Jedec SOT-32 plastic package.They are intended
for use in medium power linear and switching
applications.
MJE803
are
silicon
INTERNAL SCHEMATIC DIAGRAM
January 1997
3
21
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (I
B
= 0)
Base-Emitter Voltage (IC = 0)
Collector Current
Base Current
Total Power Dissipation at T
case
25
o
C
Storage Temperature
Max Operating Junction Temperature
For PNP types voltage and current values are negative.
80
80
5
4
0.1
40
V
V
V
A
A
W
o
C
o
C
-65 to 150
150
1/4
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相關代理商/技術參數(shù)
參數(shù)描述
MJE803G 功能描述:達林頓晶體管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE803STU 功能描述:達林頓晶體管 NPN Transisitor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE803T 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W)
MJE8500 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor
MJE8501 制造商:n/a 功能描述:_ 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-220AB