參數(shù)資料
型號: MJE803
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: DARLINGTON POWER TRANSISTORS COMPLEMENTARY
中文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225
封裝: PLASTIC, CASE 77-09, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 64K
代理商: MJE803
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max
3.13
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
V
CB
= rated V
CBO
T
case =
100
C
100
500
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
Collector-Emitter
Sustaining Voltage
V
CE
= rated V
CEO
100
μ
A
I
EBO
V
EB
= 5 V
2
mA
V
CEO(sus)
I
C
= 50 mA
80
V
V
CE(sat)
I
C
= 4 A I
B
= 40 mA
I
C
= 1.5 A I
B
= 30 mA
I
C
= 4 A V
CE
= 3 V
I
C
= 1.5 A V
CE
= 3 V
I
C
= 4 A V
CE
= 3 V
I
C
= 1.5 A V
CE
= 3 V
I
C
= 1.5 A V
CE
= 3 V
f = 1 MHz
3
2.5
V
V
V
BE
Base-Emitter Voltage
3
2.5
V
V
h
FE
DC Current Gain
100
750
h
fe
Small Signal Current
Gain
1
* Pulsed: Pulse duration = 300
μ
s, duty cycle
1.5%
MJE802-MJ803
2/4
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