參數(shù)資料
型號： MJF15030
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述： 8 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： CASE 221D-03, TO-220, FULL PACK-3
文件頁數(shù)： 1/6頁
文件大?。?/td> 246K
代理商： MJF15030
1
Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Designed for general–purpose amplifier and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Electrically Similar to the Popular MJE15030 and MJE15031
150 VCEO(sus)
8 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High Current Gain–Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
UL Recognized, File #E69369, to 3500 VRMS Isolation
TO–220 TYPE
(for 1 sec, R.H. < 30%,
3500
Test No. 2 Per Fig. 12
Derate above 25 C
0.29
W/ C
Total Power Dissipation @ TA = 25 C
PD
2
Watts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
θ
JA
R
θ
JC
TL
Max
62.5
Unit
C/W
Thermal Resistance, Junction to Case*
3.5
C/W
Lead Temperature for Soldering Purpose
260
C
a heatsink with thermal grease and a mounting torque of
≥
6 in. lbs.
(1) Proper strike and creepage distance must be provided.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF15030/D
COMPLEMENTARY
SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS
36 WATTS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJF15030_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS
MJF15030_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJF15030G 功能描述:兩極晶體管 - BJT 8A 150V 36W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJF15031 功能描述:兩極晶體管 - BJT 8A 150V 36W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJF15031G 功能描述:兩極晶體管 - BJT 8A 150V 36W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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