參數(shù)資料
型號: MK20DN512ZVMC10
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121
封裝: 8 X 8 MM, MAPBGA-121
文件頁數(shù): 28/73頁
文件大?。?/td> 1017K
代理商: MK20DN512ZVMC10
Table 21. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
tsetram32k
tsetram256k
Set FlexRAM Function execution time:
32 KB EEPROM backup
256 KB EEPROM backup
TBD
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
100
TBD
μs
teewr8b32k
teewr8b64k
teewr8b128k
teewr8b256k
Byte-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
TBD
1.5
TBD
2.5
ms
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
100
TBD
μs
teewr16b32k
teewr16b64k
teewr16b128k
teewr16b256k
Word-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
TBD
1.5
TBD
2.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
200
TBD
μs
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
Longword-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
TBD
2.7
TBD
3.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 22. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
Peripheral operating requirements and behaviors
K20 Sub-Family Data Sheet Data Sheet, Rev. 5, 5/2011.
34
Preliminary
Freescale Semiconductor, Inc.
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