TSTG Storage temperature" />
參數(shù)資料
型號: MK30DX256ZVLQ10
廠商: Freescale Semiconductor
文件頁數(shù): 2/74頁
文件大?。?/td> 0K
描述: IC ARM CORTEX MCU 256KB 144LQFP
標(biāo)準(zhǔn)包裝: 300
系列: Kinetis
核心處理器: ARM? Cortex?-M4
芯體尺寸: 32-位
速度: 100MHz
連通性: CAN,EBI/EMI,I²C,IrDA,SDHC,SPI,UART/USART
外圍設(shè)備: DMA,I²S,LCD,LVD,POR,PWM,WDT
輸入/輸出數(shù): 102
程序存儲器容量: 256KB(256K x 8)
程序存儲器類型: 閃存
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 1.71 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 37x16b,D/A 2x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 105°C
封裝/外殼: 144-LQFP
包裝: 托盤
4 Ratings
4.1 Thermal handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
TSTG
Storage temperature
–55
150
°C
TSDR
Solder temperature, lead-free
260
°C
Solder temperature, leaded
245
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
MSL
Moisture sensitivity level
3
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
-2000
+2000
V
VCDM
Electrostatic discharge voltage, charged-device model
-500
+500
V
ILAT
Latch-up current at ambient temperature of 105°C
-100
+100
mA
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
4.4 Voltage and current operating ratings
Ratings
K30 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
10
Freescale Semiconductor, Inc.
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