參數(shù)資料
型號(hào)： MK60DN256ZVLL10
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, LQFP-100
文件頁(yè)數(shù)： 30/75頁(yè)
文件大?。?/td> 1015K
代理商： MK60DN256ZVLL10
Table 21. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
teewr16b32k
teewr16b64k
teewr16b128k
teewr16b256k
Word-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
1.5
TBD
2.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
200
TBD
μs
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
Longword-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
2.7
TBD
3.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 22. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycp
Cycling endurance
10 K
TBD
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretd1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretd100 Data retention after up to 100 cycles
15
TBD
—
years
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 5, 5/2011.
36
Preliminary
Freescale Semiconductor, Inc.
相關(guān)PDF資料
PDF描述
MK60DX256ZVLL10 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP100
MK60N256VLL100R FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP100
MK60X256VLL100 FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP100
MK60N512VLQ100R FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144
MK60N256VLQ100 FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MK60DN256ZVLQ10 功能描述:ARM微控制器 - MCU KINETIS 256K ENET RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
MK60DN256ZVMD10 功能描述:ARM微控制器 - MCU Kinetis 256K enet RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
MK60DN512VLL10 功能描述:ARM微控制器 - MCU KINETIS 512K ENET RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
MK60DN512VLL10R 制造商:Freescale Semiconductor 功能描述:MK60DN512VLL10R - Tape and Reel 制造商:Freescale Semiconductor 功能描述:KINETIS 512K ENET - Tape and Reel 制造商:Freescale Semiconductor 功能描述:Kinetis 512K enet
MK60DN512VLQ10 功能描述:ARM微控制器 - MCU KINETIS 512K ENET RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
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