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參數(shù)資料
| 型號(hào)： | ML40215-S-276 |
| 英文描述： | High Reliability Semiconductor Schottky Detector Diodes |
| 中文描述： | 高可靠性的半導(dǎo)體探測(cè)器肖特基二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | ML40215-S-276 |
Preliminary Specification
The Preliminary Specifications Data Sheet Contain Typical Electrical Specifications Which May Change Prior to Final Introduction.
M/A-COM Ltd.
Tel. +44 (1344) 869-595
Fax +44 (1344) 300-020
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
i
Asia/Pacific:
Tel. +85 2 2111 8088
Fax +85 2 2111 8087
i
Europe:
High Reliability Semiconductor
Schottky Detector Diodes
Features
x
Low I/F Noise
x
High Sensitivity
x
Space Qualified
Description
The ML40215-S is a low barrier N type Silicon detector diode in the ODS
120 miniature ceramic pill type package, or in ODS 276 (the same package
with leads attached).
These devices are suitable for use in detector applications at frequencies up
to 18 GHz.
The test tables shown on this data sheet are presented in the same format as
ESA/SCC 5010 detail specifications. These devices have been tested and
screened to ESA/SCC 5010 Level B, Lot Acceptance Level 1, either by
similarity with another diode type or as required by the project. A new
wafer lot will normally require Lot Acceptance Level 2 testing; repeat
production (assembly) lots may only require Level 3 testing.
Alternative cases styles are available, many of which are suitable for Space
application.
M/A-COM can provide mixer and detector diodes for most applications.
The Semiconductor Master Catalogue contains outline drawings for
alternative case styles as well as information on the following devices:
V1.00
ODS 120 Outline
ODS 276 Outline
x
Surface Mount diodes SOT-23 and SOT-143.
x
Beam Lead and Chip Diodes.
x
Beamless Beam Lead Diodes ( Surmount
TM
).
x
Tees and Anti-Parallel Pair diodes.
x
Ring and Bridge Quad diodes.
x
Axial Lead Diodes.
x
P Type Detector Diodes.
x
Gallium Arsenide Schottky Mixer Diodes.
Maximum Ratings
(Tamb = 25°C)
No.
Characteristics
1.
Peak Incident R
F
Power
2.
Peak Incident R
F
Power
3.
CW RF Power
4.
CW RF Power
5.
DC Reverse Voltage
6.
DC Forward Current
7.
Operating
Temperature
8.
Storage Temperature
9.
Soldering Temperature
Symbol
P
PK
Maximum Ratings
1.0
Units
W
Remarks
Frequency 2.6 to 12.4 GHz, 1μsec max. pulse length.
See Note 1
Frequency 12.4 to 18.0 GHz, 1μsec max. pulse length.
See Note 1
Frequency 2.6 to 12.4 GHz. See Note 1
Frequency 12.4 to 18.0 GHz. See Note 1
P
PK
0.5
W
P
CW
P
CW
V
R
I
F
T
OP
150
100
2.0
20
mW
mW
V
mA
°C
See Note 1
-65 to +150
T
STO
T
SOL
-65 to +150
230
°C
°C
See Note 2
Notes:
1.
2.
3.
Derate linearly to 0 mW from 25°C to 150°C
For a max duration of 5 seconds and at a distance greater than 1.5 mm from the body of the 276 package
For a duration of 5 seconds at a distance greater than 1.5 mm from the body.
ML40215-S-120
ML40215-S-276
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