參數(shù)資料
型號: MLCE9.0AE3
廠商: MICROSEMI CORP
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN
文件頁數(shù): 4/4頁
文件大小: 268K
代理商: MLCE9.0AE3
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01009 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
GRAPHS
Pulse Time (tw) in
s
FIGURE 1 - Peak Pulse Power vs. Pulse Time (tW) in s
GRAPHS
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 2. As a further option for unidirectional applications, an
additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in
Figure 3. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the
internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should
be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. The
Microsemi recomme
nded rectifier part number is the “ELCR80” for the application in Figure 5. If using two (2) low
capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions
(including the reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 3
and 4 will both result in twice the capacitance of Figure 2.
FIGURE 2
FIGURE 3
FIGURE 4
TVS with internal Low
Optional Unidirectional
Optional Bidirectional
Capacitance Diode
configuration (TVS and
configuration (two TVS
separate rectifier diode)
devices in anti-parallel)
in parallel.
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