參數(shù)資料
型號(hào): MM1104
廠商: MITSUMI ELECTRIC
英文描述: Monolithic IC
中文描述: 單片集成電路
文件頁數(shù): 2/4頁
文件大小: 114K
代理商: MM1104
MITSUMI
IC for Headphone Stereos MM1104
Electrical Characteristics
(Except where noted otherwise, Ta=25
°
C)
Absolute Maximum Ratings
Item
Symbol
T
OPR
T
STG
V
CC
Pd
Vop
Ratings
-
20~+65
-
40~+125
-
0.3~+7.5
700 (Ta=25
°
C)
+2.0~+5.0
Units
°
C
°
C
V
mW
V
Operating temperature
Storage temperature
Power supply current
Power consumption
Operating voltage
Item
Symbol
I
CC
Measurement conditions
Amp. only
Min. Typ. Max. Units
11
Consumption current
Preamp unit (Ta=25
°
C)
Open-circuit gain
Closed-circuit gain
Maximum output voltage
Total harmonic distortion ratio
Output noise voltage
Crosstalk between channels
Ripple rejection
Output voltage with preamp off
Input resistance with preamp off
Output resistance with preamp off
Measurement conditions: Except where noted otherwise, V
CC
=3V, Rg=2.2k
, R
L
=30k
, f=1kHz
Power amp unit (Ta=25
°
C)
Input resistance
Ri
Voltage gain
Gv
Voltage gain difference between channels
Gv
Maximum output power
I
Pom1
Maximum output power
II
Pom2
Total harmonic distortion ratio
THD
Crosstalk between channels
CH
CT
Output noise voltage
Vn
Ripple rejection
RR
Measurement conditions: Except where noted otherwise, V
CC
=3V, Rg=1k
, R
L
=16
, f=1kHz
Motor governor (Ta=25
°
C)
Consumption current
Id
Startup current
I
MS
Reference voltage
Vref
18
mA
GVo
GVc
Vom
THD
Vno
CH
CT
RR
VoOff
RiOff
RoOff
Vo=
-
10dBm f=100Hz
Vo=
-
10dBm
THD=10%
Vo=
-
10dBm
Rg=2.2k
, CCIR waiting
Vo=
-
10dBm
V
CC
=3V, V
R
=
-
20dBm, f
R
=100Hz
Vo=
-
10dBm, when pre operation
86
42
0.74
0.06
240
60
42
-
100
-
70
10
10
dB
dB
Vrms
%
μVrms
dB
dB
dBm
k
k
0.5
0.5
500
45
30
7
7
13
13
14
32
20
34
0
62
34
0.4
62
150
50
26
36
2
k
dB
dB
mW
mW
%
dB
μVrms
dB
Po=5mW
THD=10%, R
L
=16
THD=10%, R
L
=32
Po=5mW
Po=5mW
Rg=1k
, CCIR waiting
V
CC
=3V, V
R
=
-
20dBm, f
R
=100Hz
40
20
2
45
300
40
A
2
measured
2.0
7.0
mA
mA
V
I
M
measured when R
V
=1.5
V5 measured with SW12 off
VS fluctuation for
V
CC
=1.5 to 3.5V, V
CC
=3.0V ref.
VS fluctuation for
I
M
=25 to 200m A, I
M
=100mA ref.
VS fluctuation for
Ta=
-
10 to 60
°
C, Ta=25
°
C ref.
Reference voltage V8 measured
I
M
=200mA with SW12 on
V7/V6 measured
500
0.09
0.10
0.11
Reference voltage fluctuation
I
Vref1
0.1
0.5
%/V
Reference voltage fluctuation
II
Vref2
0.005 0.05
%/mA
Reference voltage fluctuation
III
Vref3
0.01
%/
°
C
Output saturation voltage
VoSAT
0.2
0.3
V
Bridge ratio
K
9
10
11
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