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參數(shù)資料
| 型號： | MM74C89N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 64-Bit TRI-STATE Random Access Read/Write Memory |
| 中文描述： | 16 X 4 STANDARD SRAM, 780 ns, PDIP16 |
| 封裝： | PLASTIC, DIP-16 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | MM74C89N |
October 1987
Revised January 1999
M
1999 Fairchild Semiconductor Corporation
DS005888.prf
www.fairchildsemi.com
MM74C89
64-Bit 3-STATE Random Access Read/Write Memory
General Description
The MM74C89 is a 16-word by 4-bit random access read/
write memory. Inputs to the memory consist of four address
lines, four data input lines, a write enable line and a mem-
ory enable line. The four binary address inputs are
decoded internally to select each of the 16 possible word
locations. An internal address register latches the address
information on the positive to negative transition of the
memory enable input. The four 3-STATE data output lines
working in conjunction with the memory enable input pro-
vide for easy memory expansion.
Address Operation:
Address inputs must be stable t
SA
prior to the positive to negative transition of memory
enable. It is thus not necessary to hold address information
stable for more than t
HA
after the memory is enabled (posi-
tive to negative transition of memory enable).
Write Operation:
Information present at the data inputs is
written into the memory at the selected address by bringing
write enable and memory enable LOW.
Read Operation:
The complement of the information
which was written into the memory is non-destructively
read out at the four outputs. This is accomplished by
selecting the desired address and bringing memory enable
LOW and write enable HIGH.
When the device is writing or disabled the output assumes
a 3-STATE (Hi-z) condition.
Features
I
Wide supply voltage range:
I
Guaranteed noise margin:
I
High noise immunity:
3.0V to 15V
1.0V
0.45 V
CC
(typ.)
I
Low power TTL compatibility:
fan out of 2 driving 74L
I
Low power consumption:
I
Fast access time:
100 nW/package (typ.)
130 ns (typ.) at V
CC
=
10V
I
3-STATE output
Note:
The timing is different than the DM7489 in that a positive to negative
transition of the memory enable must occur for the memory to be selected.
Ordering Code:
Connection Diagram
Pin Assignments for DIP
Top View
Truth Table
Order Number
MM74C89N
Package Number Package Description
N16E
16-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide
ME WE
L
L
H
H
Operation
Write
Read
Inhibit, Storage 3-STATE
Inhibit, Storage 3-STATE
Condition of Outputs
3-STATE
Complement of Selected Word
L
H
L
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MM74C89N | 64-Bit 3-STATE Random Access Read/Write Memory |
| MM74C901 | Hex Inverting TTL Buffer . Hex Non-Inverting TTL Buffer |
| MM74C901 | Hex Inverting TTL, Non-Inverting TTL, Inverting CMOS, Non-Inverting CMOS Buffer |
| MM74C901M | Hex Inverting TTL Buffer . Hex Non-Inverting TTL Buffer |
| MM74C901N | Hex Inverting TTL Buffer . Hex Non-Inverting TTL Buffer |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MM74C90 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:4-Bit Decade Counter 4-Bit Binary Counter |
| MM74C90_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:4-Bit Decade Counter |
| MM74C901 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Hex Inverting TTL, Non-Inverting TTL, Inverting CMOS, Non-Inverting CMOS Buffer |
| MM74C901M | 功能描述:緩沖器和線路驅(qū)動器 Hex Inv TTL Buffer RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
| MM74C901MX | 功能描述:緩沖器和線路驅(qū)動器 Hex Inv TTL Buffer RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
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