Analog Integrated Circuit Device Data
Freescale Semiconductor
13
908E624
ELECTRICAL CHARACTERISTICS
MICROCONTROLLER PARAMETRICS
MICROCONTROLLER PARAMETRICS
TIMING DIAGRAMS
Figure 4. Test Circuit for Transient Test Pulses
CURRENT SENSE OPERATIONAL AMPLIFIER
Supply Voltage Rejection Ratio
(29)SVR
60
—
dB
Common Mode Rejection Ratio
(29)CMR
70
—
dB
GBP
1.0
—
MHz
Slew Rate
SR
0.5
—
V/
μs
Phase Margin (for Gain = 1, Load 100 pF/ 5.0 k
PHMO
40
—
°
Open Loop Gain
OLG
—
85
—
dB
Notes
29.
This parameter is guaranteed by process monitoring but it is not production tested.
Table 5. Microcontroller
For a detailed microcontroller description, refer to the MC68HC908EY16 data sheet.
Module
Description
Core
High-Performance HC08 Core with a Maximum Internal Bus Frequency of 8.0 MHz
Timer
Two 16-Bit Timers with 2 Channels (TIM A and TIM B)
Flash
16 K Bytes
RAM
512 Bytes
ADC
10-Bit Analog-to-Digital Converter
SPI
SPI Module
ESCI
Standard Serial Communication Interface (SCI) Module
Bit-Time Measurement
Arbitration
Prescaler with Fine Baud-Rate Adjustment
ICG
Internal Clock Generation Module
Table 4. Dynamic Electrical Characteristics (continued)
All characteristics are for the analog chip only. Please refer to the 68HC908EY16 data sheet for characteristics of the
microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN, L1, and L2
10k
1nF
Transient Pulse
Generator
Note Waveform in accordance with ISO7637 Part 1, Test Pulses 1, 2, 3a, and 3b.
10 k
Ω
1.0 nF