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參數(shù)資料
| 型號： | MMB3904LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistor(NPN Silicon) |
| 中文描述： | 通用晶體管（NPN硅） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 265K |
| 代理商： | MMB3904LT1 |
LESHAN RADIO COMPANY, LTD.
O11–2/6
MMBT3904LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS (3)
DC Current Gain(1)
(I
C
=0.1 mAdc, V
CE
=1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50mAdc, V
CE
= 1.0Vdc)
(I
C
= 100mAdc, V
CE
=1.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)(3)
(I
C
= 50 mAdc, I
B
= 5.0mAdc)
Base–Emitter Saturation Voltage(3)
(I
C
= 10 mAdc, I
B
= 1.0mAdc)
(I
C
= 50mAdc, I
B
= 5.0mAdc )
Symbol
Min
Max
Unit
h
FE
––
40
70
100
60
30
––
––
300
––
––
V
CE(sat)
Vdc
––
––
0.2
0.3
V
BE(sat)
Vdc
0.65
––
0.85
0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10mAdc, V
CE
= 20Vdc, f = 100MHz)
Output Capacitance
(V
CB
= 5.0Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedancen
(V
CE
= 10Vdc, I
C
= 1.0mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Noise Figure
f
T
300
––
MHz
C
obo
––
4.0
pF
C
ibo
––
8.0
pF
h
ie
1.0
10
pF
h
re
0.5
8.0
X10
–4
h
fe
100
400
—
h
oe
1.0
40
θ
mhos
NF
—
5.0
dB
(V
CE
= 5.0 Vdc, I
C
= 100
μ
Adc, R
S
= 1.0 k
, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc,V
BE
= –0.5Vdc
I
C
= 10 mAdc, I
B1
= 1.0mAdc)
(V
CC
= 3.0Vdc,
I
C
= 10 mAdc,I
B1
= I
B2
= 10 mAdc)
t
d
t
r
t
s
t
f
—
—
—
—
35
35
200
50
ns
ns
3. Pulse Test: Pulse Width
<
300
μ
s, Duty Cycle
<
2.0%.
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