參數(shù)資料
型號(hào)： MMBD914-V-GS18
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 參考電壓二極管
英文描述： Diode Small Signal Switching 100V 0.2A 3-Pin SOT-23 T/R
中文描述： Diodes (General Purpose, Power, Switching) 100 Volt 200mA 4ns
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 66K
代理商： MMBD914-V-GS18
MMBD914
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 15-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85734
Small Signal Switching Diode
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode in case SOT-23, especially
suited for automatic insertion.
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
1
2
3
PARTS TABLE
PART
ORDERING CODE
MMBD914-E3-08 or MMBD914-E3-18
MMBD914-HE3-08 or MMBD914-HE3-18
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
MMBD914
Single diode
5D
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak reverse voltage
Maximum average forward rectified current
Maximum power dissipation
TEST CONDITION
SYMBOL
V
RM
I
F(AV)
P
tot
VALUE
100
200
225
UNIT
V
mA
mW
T
amb
= 25 °C
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Maximum junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
SYMBOL
T
j
T
stg
T
op
VALUE
150
- 55 to + 150
- 55 to + 150
UNIT
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage drop
I
F
= 10 mA
V
R
= 20 V
V
R
= 75 V
I
F
= 10 mA to i
= 1 mA,
V
R
= 6 V, R
L
= 100
Diode capacitance
V
R
= 0 V, f = 1 MHz
SYMBOL
V
F
I
R
I
R
MIN.
TYP.
MAX.
1
25
5
UNIT
V
nA
μA
Reverse current
Reverse recovery time
t
rr
4
ns
C
D
4
pF
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