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參數(shù)資料
| 型號： | MMBF170D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | TO-236AB, 3 PIN |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 1256K |
| 代理商： | MMBF170D87Z |
BS170
/
MMBF170
—
N-Channel
Enhance
m
e
n
tMode
Field
Effect
T
ransistor
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BS170 / MMBF170 Rev. E1
1
March 2009
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Absolute Maximum Ratings T
a = 25°C unless otherwise noted
Thermal Characteristics T
a = 25°C unless otherwise noted
Symbol
Parameter
BS170
MMBF170
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS ≤ 1MΩ)60
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current - Continuous
500
mA
- Pulsed
1200
800
TJ, TSTG
Operating and Storage Temperature Range
- 55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
Symbol
Parameter
BS170
MMBF170
Units
PD
Maximum Power Dissipation
Derate above 25
°C
830
6.6
300
2.4
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
150
417
°C/W
G
S
D
G
S
TO - 92
SOT - 23
Features
■
High density cell design for low RDS(ON).
■
Voltage controlled small signal switch.
■
Rugged and reliable.
■
High saturation current capability.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF170G-AE2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170L-AE2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170LT1 | 功能描述:MOSFET 20V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF170LT1_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 500 mA, 60 V N-Channel SOT-23 |
| MMBF170LT1G | 功能描述:MOSFET 60V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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