- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383622 > MMBT123S-7 (DIODES INC) CAP .033UF 100V PPS FILM 2416 5% PDF資料下載
參數(shù)資料
| 型號： | MMBT123S-7 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP .033UF 100V PPS FILM 2416 5% |
| 中文描述： | 1000 mA, 18 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 55K |
| 代理商： | MMBT123S-7 |
DS30292 Rev. 3 - 2
1 of 3
MMBT123S
MMBT123S
1A NPN SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Collector Current Rating
Suitable as a low voltage high current driver
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
MMBT123S
45
18
5
1
300
417
-55 to +150
Unit
V
V
V
A
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
C/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K6D
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
T
C
U
D
O
R
P
W
E
N
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layoutE
B
C
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
0
8
All Dimensions in mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT2222AE | TRANSISTOR |
| MMBT2907AE | TRANSISTOR |
| MMBT3904M | TRANSISTOR |
| MMBT3904T | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT3904T-7 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT123S-7-F | 功能描述:兩極晶體管 - BJT 18V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT1616 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| MMBT1616A | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:NPN Silicon Epitaxial Planar Transistor |
| MMBT1616A-G-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| MMBT1616A-L-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。