參數(shù)資料
型號(hào)： MMBT200AD87Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 6/13頁(yè)
文件大小： 519K
代理商： MMBT200AD87Z
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
BVCBO
Collector-Base Breakdown Voltage
IC = 10
A, I
B = 0
60
V
BVCEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IE = 0
45
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
6.0
V
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
50
nA
ICES
Collector Cutoff Current
VCE = 40 V, IE = 10
50
nA
IEBO
Emitter Cutoff Current
VEB = 4.0 V, IC = 0
50
nA
fT
Current Gain - Bandwidth Product
VCE = 20 V, IC = 20 mA
250
MHz
Cobo
Output Capacitance
VCB = 10 V, f = 1.0 MHz
6.0
pF
NF
Noise Figure
IC = 100
A, VCE = 5.0 V,
RG = 2.0 k
, f = 1.0 kHz
4.0
dB
hFE
DC Current Gain
IC = 100
A, VCE = 1.0 V
200
200A
IC = 10 mA, VCE = 1.0 V
200
200A
IC = 100 mA, VCE = 1.0 V*
200A
IC = 150 mA, VCE = 5.0 V*
200
200A
80
240
100
300
100
450
600
350
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.2
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.85
1.0
V
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-T
Y
PI
CAL
P
U
L
S
E
D
C
URRE
NT
GAI
N
C
FE
125 °C
25 °C
- 40 °C
V
= 5V
CE
Collector-Emitter Saturation
Voltage vs Collect or Current
0.1
1
10
100
300
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
EC
T
O
R
EM
IT
T
E
R
VO
L
TA
G
E
(
V
)
C
CE
S
A
T
25
°C
- 40
°C
125
°C
β = 10
PNP General Purpose Amplifier
(continued)
PN200
/
MMBT200
/
PN200A
/
MMBT200A
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