參數(shù)資料
型號(hào)： MMBT2369
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： NPN Switching Transistor
中文描述： 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 121K
代理商： MMBT2369
MMBT2369
/
PN2369
—
NPN
Switching
T
ransistor
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0
1
February 2008
MMBT2369 / PN2369
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
Sourced from process 21.
Absolute Maximum Ratings * T
a = 25×C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width 300ms, Duty Cycle 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
a = 25°C unless otherwise noted
* Device mounted on FR-4PCB 1.6” 1.6” 0.06”.
Symbol
Parameter
Ratings
Units
VCEO
Collector-Emitter Voltage
15
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current
- Continuous
200
mA
ICP
**Collector Current (Pulse)
400
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
SOT-23
B
E
C
Mark: 1J
TO-92
1. Emitter 2. Base 3. Collector
1
MMBT2369
PN2369
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2369 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR, NPN, 15V
MMBT2369_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor
MMBT2369_Q 功能描述:兩極晶體管 - BJT NPN HIGH SPD SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2369A 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2369A 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR ROHS COMPLIANT:NO
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