參數(shù)資料
型號: MMBT2369ALT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù): 21/25頁
文件大?。?/td> 416K
代理商: MMBT2369ALT3
MMBT2369LT1 MMBT2369ALT1
2–312
Motorola Small–Signal Transistors, FETs and Diodes Device Data
h
FE
,MINIMUM
DC
CURRENT
GAIN
V
(sat)
,SA
T
U
RA
TION
V
OL
TA
G
E
(V
OL
TS)
COEFFICIENT
(mV/
C)°
200
100
20
50
1
2
5
10
20
50
100
IC, COLLECTOR CURRENT (mA)
Figure 13. Minimum Current Gain Characteristics
VCE = 1 V
TJ = 125°C
75
°C
25
°C
–15
°C
–55
°C
TJ = 25°C and 75°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1
2
5
10
20
50
100
IC, COLLECTOR CURRENT (mA)
Figure 14. Saturation Voltage Limits
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
0
1020
30
4050
6070
80
90
100
IC, COLLECTOR CURRENT (mA)
Figure 15. Typical Temperature Coefficients
βF = 10
TJ = 25°C
MAX VBE(sat)
MIN VBE(sat)
MAX VCE(sat)
(25
°C to 125°C)
(–55
°C to +25°C)
(–55
°C to +25°C)
(25
°C to 125°C)
θVC for VCE(sat)
θVB for VBE(sat)
–55
°C to +25°C25°C to 125°C
θVC
±0.15 mV/°C
θVB
±0.4 mV/°C
±0.3 mV/°C
APPROXIMATE DEVIATION
FROM NOMINAL
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MMBT2369LT3 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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