參數(shù)資料
型號(hào)： MMBT3904LT1G
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： General Purpose Transistor (NPN Silicon)
中文描述： 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 58K
代理商： MMBT3904LT1G
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient Max
Device mounted on a PCB area of 1 cm
2
357.1
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= -3 V)
Base Cut-off Current
(V
BE
= -3 V)
V
CE
= 30 V
50
nA
I
BEX
V
CE
= 30 V
50
nA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1 mA
40
V
I
C
= 10
μ
A
60
V
I
E
= 10
μ
A
6
V
I
C
= 10 mA I
B
= 1 mA
I
C
= 50 mA I
B
= 5 mA
0.2
0.2
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 10 mA I
B
= 1 mA
I
C
= 50 mA I
B
= 5 mA
0.65
0.85
0.95
V
V
h
FE
DC Current Gain
I
C
= 0.1 mA V
CE
= 1 V
I
C
= 1 mA V
CE
= 1 V
I
C
= 10 mA V
CE
= 1 V
I
C
= 50 mA V
CE
= 1 V
I
C
= 100 mA V
CE
= 1 V
60
80
100
60
30
300
f
T
Transition Frequency
I
C
= 10 mA V
CE
= 20 V f = 100 MHz
250
270
MHz
C
CBO
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
I
E
= 0 V
CB
= 10 V f = 1 MHz
4
pF
C
EBO
I
C
= 0 V
EB
= 0.5 V f = 1MHz
18
pF
NF
V
CE
= 5 V I
C
= 0.1 mA f = 10 Hz
to 15.7 KHz R
G
= 1 K
I
C
= 10 mA I
B
= 1 mA
V
CC
= 30 V
5
dB
t
d
t
r
Delay Time
Rise Time
35
35
ns
ns
t
s
t
f
Storage Time
Fall Time
I
C
= 10 mA I
B1
= -I
B2
= 1 mA
V
CC
= 30 V
200
50
ns
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
MMBT3904
2/4
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