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參數(shù)資料
| 型號： | MMBT3904WT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors(NPN and PNP Silicon) |
| 中文描述： | 通用晶體管（NPN和PNP硅） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | MMBT3904WT1 |
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MMBT3904
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3904WT1_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MMBT3904WT1G | 功能描述:兩極晶體管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3904WT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT3904WT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMBT3906 | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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