參數(shù)資料
型號: MMBT3906LT1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: General Purpose Transistor(PNP Silicon)
中文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: CASE 318-08, TO-236, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 58K
代理商: MMBT3906LT1
MMBT3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
I
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
I
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
I
TAPE AND REEL PACKING
I
THE NPN COMPLEMENTARY TYPE IS
MMBT3904
APPLICATIONS
I
WELL SUITABLE FOR PORTABLE
EQUIPMENT
I
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
June 2002
SOT-23
Type
Marking
MMBT3906
36
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
-60
V
V
CEO
V
EBO
I
C
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Total Dissipation at T
C
= 25
o
C
-40
V
-6
V
-200
mA
P
tot
350
mW
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
150
1/4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3906LT1_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor PNP Silicon
MMBT3906LT1G 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3906LT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MMBT3906LT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
MMBT3906LT1HTSA1 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR SWITCHING PNP SOT-23