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參數(shù)資料
| 型號： | MMBT4401LT1 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 673K |
| 代理商： | MMBT4401LT1 |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(2)
Chatacteristic
Collector-Emitter Breakdown Voltage(2) (IC= 1.0 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 0.1Adc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 0.1Adc, IC= 0)
Base Cutoff Current (VCE= 35Vdc, VBE(off)= 0.4Vdc)
Collector Cutoff Current (VCE= 35Vdc, VEB= 0.4Vdc)
DC Current Gain (IC= 0.1mAdc, VCE= 1.0Vdc)
(IC= 10mAdc, VCE= 1.0Vdc)
(IC= 1.0mAdc, VCE= 1.0Vdc)
V(BR)CEO
40
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
6.0
-
Vdc
ICEX
IBEV
-
0.1
-
0.1
hFE
20
-
40
-
80
-
100
300
Adc
Symbol
Min
Max
Unit
(IC= 150mAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
(IC= 500mAdc, VCE= 2.0Vdc)
Vdc
VCE(sat)
40
-
0.4
-
0.75
Vdc
VBE(sat)
0.75
0.95
-
1.2
Base-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
RECTRON
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
fT
250
-
MHz
Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 10Vdc, f= 100MHz)
Ccb
Ceb
-
6.5
pF
td
tr
ts
tf
-
ns
hie
-
30
1.0
15
kohms
hre
0.1
8.0
40
500
X 10-4
hfe
1.0
30
-
hoe
225
30
15
20
mhos
Output Capacitance (VCB= 5.0Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= 0.5Vdc, IC= 0, f= 1.0MHz)
Voltage Feedback Ratio (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Output Admittance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
(VCC= 30Vdc, VEB= 2.0Vdc, IC= 150mAdc, IB1= 15mAdc)
(VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc)
Input lmpedance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Delay Time
Rise Time
Storage Time
Fall Time
NOTES : 2. Pulse Test: Pulse Width<300
s,Duty Cycle<2.0%
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MMBT4401LT1G | 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT4401LT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMBT4401LT1S | 制造商:Motorola Inc 功能描述:Electronic Component |
| MMBT4401LT3 | 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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