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參數(shù)資料
| 型號(hào)： | MMBV105GLT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CLAMP |
| 中文描述： | UHF BAND, 2.15 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 52K |
| 代理商： | MMBV105GLT1 |
LESHAN RADIO COMPANY, LTD.
MMBV105GLT–1/2
1
3
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV105GLT1
This device is designed in the surface Mount package for
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
Controlled and Uniform Tuning Ration
Silicon Tuning Diode
3
CATHODE
1
ANODE
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
( I
R
=10
μ
Adc)
Reverse Voltage Leakage Current
( V
R
=28Vdc)
Symbol
V
R
I
F
P
D
Value
30
200
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
T
J
T
stg
Symbol
Min
Max
Unit
V
(BR)R
30
—
Vdc
I
R
—
50
nAdc
Min
1.5
Max
2.8
Typ
250
Min
4.0
Max
6.5
MMBV105GLT1
Device Type
C
T
V
R
=25Vdc,f =1.0MHz
pF
Q
V
R
=3.0Vdc
f=50MHz
C
R
C
3
/C
25
f=1.0MHz
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| MMBV105GLT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
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