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參數(shù)資料
| 型號(hào)： | MMBV109LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Silicon Epicap Diodes |
| 中文描述： | VHF BAND, 29 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | LEAD FREE, CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 71K |
| 代理商： | MMBV109LT1G |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 5
1
Publication Order Number:
MMBV109LT1/D
MMBV109LT1, MV209
Preferred Devices
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;
providing solidstate reliability in replacement of mechanical tuning
methods.
Features
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
PbFree Packages are Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current
I
F
200
mAdc
Forward Power Dissipation
MMBV109LT1
@ T
= 25
°
C
Derate above 25
°
C
MV209
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
200
2.0
200
1.6
mW
mW/
°
C
mW
mW/
°
C
Junction Temperature
T
J
+125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
30
Vdc
Reverse Voltage Leakage Current
(V
R
= 25 Vdc)
I
R
0.1
Adc
Diode Capacitance Temperature Co-
efficient (V
R
= 3.0 Vdc, f = 1.0 MHz)
TC
C
300
ppm/
°
C
http://onsemi.com
2632 pF VOLTAGE VARIABLE
CAPACITANCE DIODES
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT23
TO92
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
1
2
MV
209
AYWW
TO92 (TO226AC)
CASE 182
STYLE 1
SOT23 (TO236)
CASE 31808
STYLE 8
MV209 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
M4A M
M4A
M
= Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING
DIAGRAMS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBV109LT3 | Silicon Epicap Diodes |
| MMBV109LT3G | Silicon Epicap Diodes |
| MMBV109LT1 | Silicon Epicap Diodes(固態(tài)調(diào)諧二極管) |
| MMBV2108LT1 | Silicon Tuning Diodes(固態(tài)調(diào)諧二極管) |
| MMBV2101LT1 | Silicon Tuning Diodes(固態(tài)調(diào)諧二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV109LT3 | 功能描述:變?nèi)荻O管 30V 26pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類(lèi)型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV109LT3G | 功能描述:變?nèi)荻O管 30V 26pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類(lèi)型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV1321_R1_00001 | 制造商:PanJit Touch Screens 功能描述: |
| MMBV2101 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MMBV2101L | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Silicon Tuning Diodes |
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