- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383622 > MMBV432LT1 (樂山無線電股份有限公司) Silicon Tuning Diode PDF資料下載
參數(shù)資料
| 型號： | MMBV432LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | 硅調(diào)諧二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MMBV432LT1 |
LESHAN RADIO COMPANY, LTD.
MMBV432–1/2
1
3
2
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
MMBV432LT1
This device is designed for FM tuning, general frequency control and
tuning, or any top–of–the–line application requiring back–to–back diode con-
figuration for minimum signal distortion and detuning. This device is supplied
in the SOT–23 plastic package for high volume, pick and place assembly
requirements.
High Figure of Merit—
Q = 150 (Typ) @ V
R
= 2.0 Vdc, f = 100 MHz
Guaranteed Capacitance Range
Dual Diodes – Save Space and Reduce Cost
Surface Mount Package
Available in 8 mm Tape and Reel
Monolithic Chip Provides Improved Matching – Guaranteed
±
1.0% (Max)
Over Specified Tuning Range
Silicon Tuning Diode
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
Value
14
200
225
1.8
+125
–55 to +125
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
T
J
T
stg
DEVICE MARKING
MMBV432LT1=M4B
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10
μ
Adc)
Reverse Voltage Leakage Current
(V
R
=9.0Vdc)
Diode Capacitance
(V
R
=2.0 Vdc,f=1.0MHz)
Capacitance Ratio C2/C8
(f=1.0MHz)
Figure of Merit
(V
R
=2.0 Vdc, f=100MHz)
Symbol
Min
Typ
Max
Unit
V
(BR)R
14
—
—
Vdc
I
R
—
—
100
nAdc
C
T
43
—
48.1
pF
C
R
1.5
—
2.0
—
Q
100
150
—
—
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBV609LT1 | Silicon Tuning Diode |
| MMBV609 | Silicon Tuning Diode |
| MMBV809LT1 | Silicon Tuning Diode |
| MMBV809LT1 | Silicon Tuning Diode |
| MMBZ18VAL | 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV432LT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
| MMBV432LT1G | 功能描述:變?nèi)荻O管 14V 43pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV609 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MMBV609LT1 | 功能描述:變?nèi)荻O管 20V 26pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV609LT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。