參數(shù)資料
型號: MMBZ12VAL/DG
廠商: NXP SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: TVS DIODE, TO-236AB
封裝: HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件頁數(shù): 1/15頁
文件大?。?/td> 78K
代理商: MMBZ12VAL/DG
1.
Product prole
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode conguration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
[1]
All types available as /DG halogen-free version.
1.2 Features
1.3 Applications
MMBZxVAL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 1 September 2008
Product data sheet
Table 1.
Product overview
Type number[1]
Package
Conguration
NXP
JEDEC
MMBZ12VAL
SOT23
TO-236AB
dual common anode
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
I Unidirectional ESD protection of
two lines
I ESD protection up to 30 kV (contact
discharge)
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)
I Low diode capacitance: Cd ≤ 140 pF
I IEC 61643-321
I Rated peak pulse power: PPPM ≤ 40 W I AEC-Q101 qualied
I Ultra low leakage current: IRM ≤ 5nA
I Computers and peripherals
I Automotive electronic control units
I Audio and video equipment
I Portable electronics
I Cellular handsets and accessories
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