- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367625 > MMBZ12VDL (NXP SEMICONDUCTORS) Double ESD protection diodes for transient overvoltage suppression PDF資料下載
參數(shù)資料
| 型號： | MMBZ12VDL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Double ESD protection diodes for transient overvoltage suppression |
| 中文描述： | TVS DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 79K |
| 代理商： | MMBZ12VDL |
MMBZXVCL_MMBZXVDL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
4 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
5.
Limiting values
[1]
In accordance with IEC 61643-321 (10/1000
μ
s current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 or 2 to pin 3.
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per diode
P
PPM
rated peak pulse power
I
PPM
rated peak pulse current
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
Per device
P
tot
total power dissipation
Limiting values
Conditions
Min
Max
Unit
t
p
= 10/1000
μ
s
t
p
= 10/1000
μ
s
[1][2]
-
40
W
[1][2]
-
2.35
A
-
1.9
A
-
1.6
A
-
1.4
A
-
1
A
-
0.87
A
T
amb
≤
25
°
C
[3]
-
350
440
150
+150
+150
mW
mW
°
C
°
C
°
C
[4]
-
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
55
65
Table 7.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per diode
V
ESD
electrostatic discharge voltage
ESD maximum ratings
Conditions
Min
Max
Unit
[1][2]
IEC 61000-4-2
(contact discharge)
machine model
-
30
kV
-
2
kV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ18VCL | Double ESD protection diodes for transient overvoltage suppression |
| MMBZ20VCL | Double ESD protection diodes for transient overvoltage suppression |
| MMBZ33VCL | Double ESD protection diodes for transient overvoltage suppression |
| MPT612FBD48 | Maximum power point tracking IC |
| MX0912B251Y | NPN microwave power transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ12VDL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 8.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ12VDL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VDL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| MMBZ12VDLDG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ15 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40W PEAK POWER DUAL SURFACE MOUNT TVS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。