- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄201973 > MMBZ27VDA-GS18 (VISHAY SEMICONDUCTORS) 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | MMBZ27VDA-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | MMBZ27VDA-GS18 |
VISHAY
MMBZ...VDA and C Series
Document Number 85808
Rev. 1.4, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
12
3
12
3
Common Cathode
Common Anode
MMBZ15VDC
MMBZ27VDC
MMBZ15VDA
MMBZ27VDA
18654
Small Signal Zener Diodes, Dual
Features
Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
Dual package provides for Bidirectional or sepa-
rate unidirectional configurations.
The dual configurations protect two separate lines
with only one device.
Peak Power: 40 W @1 ms (Bidirectional) .
Ideal for ESD Protection.
For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Terminals: Solderable per MIL-STD-750, method
2026
Packaging Codes/Options:
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box
GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box
Marking:
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ15VDA = TA5
MMBZ27VDA = TA7
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Nonrepetitive current pulse per Figure 2 and derate above T
amb = 25 °C per Figure 3.
2) FR-5 = 1.0 x 0.75 x 0.62 in.
3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
4) The MMBZ6V8DC/A is rated at 24 V.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Peak power dissipation1)
PPK
404)
W
Power dissipation
on FR-5 Board2)
Tamb = 25 °C
Derate above 25 °C
Ptot
225
1.8
mW
mW/°C
Power dissipation
on Alumina Substrate3)
Tamb = 25 °C
Derate above 25 °C
Ptot
300
2.4
mW
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambiant air
RthJA
556
°C/W
Operating and storage temperature range
Tj, Tstg
- 55 to + 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ27VDC-GS08 | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| MMBZ6.8VDA-GS08 | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| MSMF15-T13 | 100 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| M1102NC600 | 1102 A, 6000 V, SILICON, RECTIFIER DIODE |
| M2322ZC340 | 2322 A, 3400 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ27VDA-V | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Zener Diodes, Dual |
| MMBZ27VDA-V_12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Zener Diodes, Dual |
| MMBZ27VDA-V-GS08 | 功能描述:穩(wěn)壓二極管 27 Volt 40 Watt Common Anode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ27VDA-V-GS18 | 功能描述:穩(wěn)壓二極管 27 Volt 40 Wat Common Anode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ27VDC | 制造商:VISHAY SEMICONDUCTOR 功能描述:LEADED |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。