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參數(shù)資料
| 型號： | MMBZ5V6ALT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 68K |
| 代理商： | MMBZ5V6ALT3 |
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Motorola TVS/Zener Device Data
5-55
24 Watt Peak Power Data Sheet
SOT 23 Dual Monolithic
Common Anode Zener
Transient Voltage Suppressor
For ESD Protection
This dual monolithic silicon zener diode is designed for applications requiring transient
overvoltage protection capability. It is intended for use in voltage and ESD sensitive equip-
ment such as computers, printers, business machines, communication systems, medical
equipment and other applications. Its dual junction common anode design protects two
separate lines using only one package. These devices are ideal for situations where
board space is at a premium.
Specification Features:
SOT-23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Peak Power — 24 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 A
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
Void Free, Transfer-Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to Order the 7 inch/3,000 Unit Reel
Replace “T1” with “T3” in the Device Number to Order the 13 inch/10,000 Unit Reel
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seremban, Malaysia
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
@ TA ≤ 25°C
Ppk
24
Watts
Total Power Dissipation on FR-5 Board (2) @ TA = 25°C
Derate above 25
°C
°PD°
°225
1.8
°mW°
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C
Derate above 25
°C
°PD°
°300
2.4
°mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature Range
TJ
Tstg
°– 55 to +150°
°C
Lead Solder Temperature — Maximum
(10 Second Duration)
TL
260
°C
(1) Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
(2) FR-5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
MMBZ5V6ALT1
SOT-23 DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5.6 VOLTS
24 WATTS PEAK POWER
CASE 318-07
STYLE 12
LOW PROFILE SOT-23
PLASTIC
1
2
3
1
3
2
Motorola Preferred Device
PIN 1. CATHODE
2. CATHODE
3. ANODE
ADDITIONAL VOLTAGES AVAILABLE
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| MMBZ5V6ALT3G | 功能描述:TVS二極管陣列 5.6V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ5V6B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 24W Pk Pwr Zener Trans volt Suppr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MMBZ5V6VAL-7 | 制造商:Diodes Incorporated 功能描述:24W AND 40W PEAK PWR DUAL SMD TVS 3SOT-23 - Tape and Reel |
| MMBZ6V2AL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 3V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23; Reverse Stand-Off Voltage Vrwm:3V; Breakdown Voltage Min:5.89V; Breakdown Voltage Max:6.51V; Clamping Voltage Vc Max:8.7V; Peak Pulse Current Ippm:2.76A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ6V2AL,215 | 功能描述:ESD 抑制器 1Ch 8.7V 2.76A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
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