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參數(shù)資料
| 型號： | MMDF1N05E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 1 Amp, 50 Volts N-Channel(1A，50V，N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 功率MOSFET 1安培，50伏特N溝道（第1A的50V，?溝道增強(qiáng)型功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 72K |
| 代理商： | MMDF1N05E |
MMDF1N05E
http://onsemi.com
4
0
VGS
VDS
Ciss
Coss
16
10
6
0
12
10
8
6
4
2
0
Qg, TOTAL GATE CHARGE (nC)
V
Figure 7. Capacitance Variation
2
4
8
12
14
Figure 8. Gate Charge versus
Gate–To–Source Voltage
1200
1000
800
600
400
020
10
0
20
C
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
200
15
5
5
10
15
VDS = 25 V
ID = 1.2 A
VDS = 0
Ciss
Crss
Crss
VGS = 0
TJ = 25
°
C
25
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum drain–to–source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25
°
C
and a maximum junction temperature of 150
°
C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. ON
Semiconductor Application Note, AN569, “Transient
Thermal Resistance – General Data and Its Use” provides
detailed instructions.
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
10
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2
″
sq. FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with one die operating, 10s max.
100
μ
s
10
μ
s
Figure 10. Thermal Response
t, TIME (s)
R
T
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0175
0.0710
0.2706
0.5776
0.7086
107.55 F
1.7891 F
0.3074 F
0.0854 F
0.0154 F
Chip
Ambient
Normalized to
θ
ja at 10s.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF1N05ER2 | 功能描述:MOSFET 50V 1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF1N05ER2G | 功能描述:MOSFET NFET SO8D 50V 200mA 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
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