參數(shù)資料
型號(hào)： MMDF2N02E
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 2 Amps, 25 Volts N Channel SO8, Dual(2A,25V,SO-8,N溝道功率雙MOSFET)
中文描述： 功率MOSFET 2安培，25伏特?頻道SO8封裝，雙（第2A，25V的，SO - 8封裝，?溝道功率雙MOSFET的）
文件頁數(shù)： 2/7頁
文件大?。?/td> 94K
代理商： MMDF2N02E
MMDF2N02E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
V
(BR)DSS
25
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc
V
GS(th)
1.0
2.0
3.0
Vdc
Static DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
(V
GS
= 4.5 Vdc, I
D
= 1.0 Adc)
R
DS(on)
0.083
0.110
0.100
0.200
Forward Transconductance (V
DS
= 3.0 Vdc, I
D
= 1.0 Adc)
g
FS
1.0
2.6
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 16 Vdc, V
= 0 Vdc,
f = 1.0 MHz)
C
iss
380
532
pF
Output Capacitance
C
oss
235
329
Transfer Capacitance
C
rss
55
110
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
(V
DD
= 10
Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc, R
G
= 6.0 )
t
d(on)
7.0
21
ns
Rise Time
t
r
17
30
TurnOff Delay Time
t
d(off)
27
48
Fall Time
t
f
18
30
TurnOn Delay Time
(V
DD
= 10
Vdc, I
D
= 2.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 9.1 )
t
d(on)
10
30
Rise Time
t
r
35
70
TurnOff Delay Time
t
d(off)
19
38
Fall Time
t
f
25
50
Gate Charge
(V
DS
= 16 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
Q
T
10.6
30
nC
Q
1
1.3
Q
2
2.9
Q
3
2.7
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
V
SD
1.0
1.4
Vdc
Reverse Recovery Time
See Figure 11
(I
S
= 2.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
34
66
ns
t
a
17
t
b
17
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
Q
RR
0.03
C
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