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參數(shù)資料
| 型號： | MMDF3N03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS |
| 中文描述： | 2.8 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 281K |
| 代理商： | MMDF3N03HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
—
34.5
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.7
3.0
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
—
0.06
0.065
0.07
0.075
Ohms
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
2.0
3.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
450
630
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
—
160
225
Transfer Capacitance
—
35
70
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
—
12
24
ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
—
65
130
Turn–Off Delay Time
—
16
32
Fall Time
—
19
38
Turn–On Delay Time
RG = 9.1
)
—
8
16
ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
—
15
30
Turn–Off Delay Time
—
30
60
Fall Time
tf
—
23
46
Gate Charge
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
11.5
16
nC
(VDS = 10 Vdc, ID = 3.0 Adc,
—
1.5
—
—
3.5
—
—
2.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.82
0.7
1.2
—
Vdc
Reverse Recovery Time
See Figure 12
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
24
—
ns
(IS = 3.0 Adc, VGS = 0 Vdc,
—
17
—
—
7
—
Reverse Recovery Storage Charge
QRR
—
0.025
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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