參數(shù)資料
型號： MMJT9410
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Bipolar Power Transistors NPN Silicon(NPN型雙極性功率晶體管)
中文描述： 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA
封裝： PLASTIC, CASE 318E-04, TO-261, 4 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 73K
代理商： MMJT9410
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 5
1
Publication Order Number:
MMJT9410/D
MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
Collector Emitter Sustaining Voltage
V
CEO(sus)
= 30 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain
h
FE
= 85 (Min) @ I
C
= 0.8 Adc
= 60 (Min) @ I
C
= 3.0 Adc
Low Collector Emitter Saturation Voltage
V
CE(sat)
= 0.2 Vdc (Max) @ I
C
= 1.2 Adc
= 0.45 Vdc (Max) @ I
C
= 3.0 Adc
SOT223 Surface Mount Packaging
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
V
CB
V
EB
I
B
I
C
30
Vdc
CollectorBase Voltage
45
Vdc
EmitterBase Voltage
±
6.0
Vdc
Base Current Continuous
1.0
Adc
Collector Current
Continuous
Peak
3.0
5.0
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Total P
@ T
= 25
°
C mounted on 1” sq.
(645 sq. mm) Collector pad on FR4
bd material
Total P
D
@ T
A
= 25
°
C mounted on 0.012” sq.
(7.6 sq. mm) Collector pad on FR4 bd material
P
D
3.0
24
1.7
0.75
W
mW/
°
C
W
Operating and Storage Junction
Temperature Range
T
J,
T
stg
55 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
R
JA
42
°
C/W
°
C/W
Thermal Resistance, JunctiontoAmbient on
1” sq. (645 sq. mm) Collector pad on FR4 bd
material
75
Thermal Resistance, JunctiontoAmbient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR4 bd material
R
JA
165
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
T
L
260
°
C
http://onsemi.com
Schematic
C 2,4
B 1
E 3
Top View
Pinout
C
C
2
E
3
B
1
4
POWER BJT
I
C
= 3.0 AMPERES
BV
CEO
= 30 VOLTS
V
CE(sat)
= 0.2 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMJT9410
SOT223
1000 / Tape & Reel
MMJT9410G
SOT223
(PbFree)
1000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT223 (TO261)
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
9410
A
Y
W
9410 = Device Code
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
= Work Week
1
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMJT9410G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors NPN Silicon
MMJT9410T1 功能描述:兩極晶體管 - BJT 3A 30V 3W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9410T1G 功能描述:兩極晶體管 - BJT 3A 30V 3W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon
MMJT9435T1 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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