- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377989 > MMPQ2907A (FAIRCHILD SEMICONDUCTOR CORP) PNP Multi-Chip General Purpose Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | MMPQ2907A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Multi-Chip General Purpose Amplifier |
| 中文描述： | 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MMPQ2907A |
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
B
Base Cutoff Current
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
V
EB
= 2.0 V, I
C
= 0,
f = 100 kHz
250
MHz
C
obo
Output Capacitance
6.0
pF
C
ibo
Input Capacitance
12
pF
SWITCHING CHARACTERISTICS
t
on
Turn-on Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn-off Time
t
s
Storage Time
t
f
Fall Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
V
CC
= 6.0 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
I
C
= 10 mA, I
B
= 0
60
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 30 V, V
EB
= 0.5 V
V
CE
= 30 V, V
BE
= 0.5 V
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 125
°
C
60
5.0
V
V
nA
nA
μ
A
μ
A
50
50
0.02
20
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
75
100
100
100
50
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
0.4
1.6
1.3
2.6
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
PNP Multi-Chip General Purpose Amplifier
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMPQ3467 | PNP Switching Transistor |
| MMPQ3467 | Quad Memory Driver Transistor |
| MMPQ3904 | NPN General Purpose Amplifier |
| MMPQ3904 | SURFACE MOUNT NPN SILICON QUAD TRANSISTOR |
| MMPQ3906 | PNP Multi-Chip General Purpose Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMPQ2907A_Q | 功能描述:兩極晶體管 - BJT PNP Gen Purpose Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3467 | 功能描述:兩極晶體管 - BJT 1A 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3725 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。