參數(shù)資料
型號: MMPQ3725
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN Switching Transistor
中文描述: Si, SMALL SIGNAL TRANSISTOR, MS-012AC
封裝: SOIC-16
文件頁數(shù): 2/4頁
文件大小: 111K
代理商: MMPQ3725
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
35
25
75
45
200
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.32
0.45
Vdc
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
DYNAMIC CHARACTERISTICS
VBE(sat)
0.8
0.9
1.1
Vdc
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
275
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
5.1
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cib
62
pF
Turn–On Time
(IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = –3.8 Vdc)
ton
20
ns
Turn–Off Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
toff
50
ns
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
相關(guān)PDF資料
PDF描述
MMQA SC-59 Quad Monolithic Common Anode
MMQA SC-74 Quad Monolithic Common Anode
MMSD1000LT1 SWITCHING DIODE
MMBD1000LT1 SWITCHING DIODE
MMBD3000T1 SWITCHING DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMPQ3725 WAF 制造商:ON Semiconductor 功能描述:
MMPQ3904 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ3904_Q 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ3904-CUT TAPE 制造商:FAIRCHILD 功能描述:MMPQ39 Series NPN 1 W 40 V 200 mA General Purpose Transistor - SOIC-16
MMPQ3904R1 功能描述:兩極晶體管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2