- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄202012 > MMQA12VT3 (MOTOROLA INC) 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | MMQA12VT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SC-59, 6 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | MMQA12VT3 |
3
MOTOROLA
MMQA Series
TYPICAL CHARACTERISTICS
Figure 3. Steady State Power Derating Curve
Figure 4. Pulse Derating Curve
Figure 5. 10
× 1000 ms Pulse Waveform
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
P
D
,POWER
DISSIP
A
TION
(mW)
TA, AMBIENT TEMPERATURE (°C)
FR-5 BOARD
ALUMINA SUBSTRATE
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
C°
V
ALUE
(%)
100
50
0
01
2
3
4
t, TIME (ms)
tr
tP
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
tr ≤ 10 s
HALF VALUE —
IRSM
2
PEAK VALUE — IRSM
Figure 6. 8
× 20 ms Pulse Waveform
Figure 7. Maximum Non–Repetitive Surge
Power, Ppk versus PW
Figure 8. Typical Maximum Non–Repetitive
Surge Power, Ppk versus VBR
Ppk
PEAK
SURGE
POWER
(W)
0.1
1.0
10
100
1000
1.0
10
100
Power is defined as VRSM x IZ(pk) where VRSM
is the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°C
100
90
80
70
60
50
40
30
20
10
0
020
40
60
80
t, TIME (
ms)
%
OF
PEAK
PULSE
CURRENT
200
180
160
140
120
100
80
60
40
20
0
5.6
6.8
12
20
33
NOMINAL VZ
P
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
27
,PEAK
SURGE
POWER
(W)
PK
8
× 20 WAVEFORM AS PER FIGURE 6
10
× 100 WAVEFORM AS PER FIGURE 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MA4PH151 | 100 V, SILICON, PIN DIODE |
| MMSZ5248B | 18 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMSZ5252B | 24 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MV1404ACHIP | 120 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| MV1410BCHIP | 22 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMQA13V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Direct ProTek Replacement:PSMS12 |
| MMQA13VT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Transient Voltage Suppressors for ESD Protection |
| MMQA13VT1 | 功能描述:TVS二極管陣列 13V 150W TVS Quad RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMQA13VT1G | 功能描述:TVS二極管陣列 13V 150W TVS Quad Array RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMQA15V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Direct ProTek Replacement:SMS12 |Alternative ProTek Replacement:PSMS15 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。