參數(shù)資料
型號(hào)： MMSD4148T1
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： SWITCHING DIODE
中文描述： 0.2 A, 100 V, SILICON, SIGNAL DIODE
封裝： CASE 425-04, 2 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 22K
代理商： MMSD4148T1
Absolute Maximum Ratings*
TA = 25
O
C unless otherwise noted
Sym
Parameter
Value
Units
T
stg
T
J
P
D
R
OJA
W
iv
I
O
I
F
i
F(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T
A
= 25
O
C
Linear Derating Factor from T
A
= 25
O
C
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
F
)
Peak Forward Surge Current (I
FSM
) Pulse Width = 1.0 Second
-55 to +150
-55 to +150
400
3.2
312
75
200
600
1.0
2.0
O
C
O
C
W
mW/
O
C
O
C/W
V
mA
mA
Amp
Amp
Pulse Width = 1.0 microsecond
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
MMSD4148
Electrical Characteristics
TA = 25
O
C unless otherwise noted
SYM
CHARACTERISTICS
MIN
MAX
UNITS
TEST CONDITIONS
B
V
Breakdown Voltage
100
75
V
V
I
R
I
R
=
V
R
=
V
R
=
V
R
=
I
F
V
R
=
I
F
= 10 mA V
R
= 6.0 V
I
RR
=
1.0 mA
R
L
= 100 Ohms
=
100 uA
5.0 uA
I
R
Reverse Leakage
25
50
5.0
nA
uA
uA
20 V
20 V T
A
= 150
O
C
75 V
V
F
C
T
T
RR
Forward Voltage
1.0
V
=
10 mA
Capacitance
4.0
pF
0.0 V,f = 1.0 MHz
Reverse Recovery Time
4.0
ns
High Conductance
Fast Diode
1997 Fairchild Semiconductor Corporation
2
1
Actual Size
Top Mark: 5H
Features:
Compact surface mount with same footprint as mini-melf.
400 milliwatt Power Dissipation package.
High Breakdown Voltage, Fast Switching Speed.
Typical capacitance less than 1.5 picofarad.
Ordering:
7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOD-123
Surface Mount package makes it desirable also as a general
purpose diode.
ELECTRICALLY THE SAME AS
THE FDLL4148 DEVICE. SOURCED
FROM THE 1P PRODUCT.
Revision A - November 11, 1998
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