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參數(shù)資料
| 型號(hào)： | MMSF10N03Z |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 196K |
| 代理商： | MMSF10N03Z |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (1) (3)
V(BR)DSS
30
—
—
65
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
3.0
μ
Adc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (1) (3)
VGS(th)
1.0
—
1.2
3.5
1.7
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) (1)
(Cpk
≥
2.0) (1) (3)
RDS(on)
—
—
10
13
13
18
m
gFS
7.0
13
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
720
1010
pF
Output Capacitance
—
570
800
Transfer Capacitance
—
78
110
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
) (1)
1 0 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
35
70
ns
Rise Time
—
105
210
Turn–Off Delay Time
—
970
1940
Fall Time
—
550
1100
Gate Charge
See Figure 8
(VDS = 15 Vd
(DS
VGS = 10 Vdc) (1)
I
2 0 Ad
—
46
64
nC
—
3.8
—
,D
,
—
11
—
—
8.1
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc) (1)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.80
0.70
1.1
—
Vdc
Reverse Recovery Time
(IS = 2 3 Ad
(S
dIS/dt = 100 A/
μ
s) (1)
V
0 Vd
trr
ta
tb
—
460
—
ns
—
180
—
GS
,
—
280
—
Reverse Recovery Stored Charge
QRR
—
4.2
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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| MMSF10N03ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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