參數(shù)資料
型號: MMSF4N01HD
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: TMOS MOSFET 5.8 AMPERES 20 VOLTS
中文描述: 5800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MINIATURE, CASE 751-05, SO-8
文件頁數(shù): 3/10頁
文件大小: 285K
代理商: MMSF4N01HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
0
2
4
8
TJ = 25
°
C
1.2
6
1.6
2
4.5 V
3.1 V
2.7 V
R
(
R
Figure 1. On–Region Characteristics
ID
1
1.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.4
2.2
ID
Figure 2. Transfer Characteristics
0
2
4
8
0.03
0.04
0.05
0.06
0.07
0
2
4
8
0.030
0.035
0.040
0.050
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
12
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VDS
10 V
TJ = 25
°
C
VGS = 0 V
TJ = 25
°
C
ID = 2 A
VGS = 2.7 V
VGS = 4.5 V
ID = 4 A
1.6
1.8
2
6
4.5 V
–50
–25
0
25
50
75
100
125
150
TJ = 125
°
C
10
8
10
100
°
C
R
0
2
4
8
6
25
°
C
100
°
C
TJ = –55
°
C
0.045
6
6
0.2
0.6
1
1.4
1.8
VGS = 8 V
2.5 V
2.3 V
2.1 V
1.9 V
1.5 V
1.3 V
1.7 V
0
0.5
1
2
1.5
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