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參數(shù)資料
| 型號： | MMSF7P03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 7 A, 30 V, P Channel SO8(7A，30V，P溝道功率MOSFET) |
| 中文描述： | 功率MOSFET 7甲，30五，P通道SO8封裝（第7A，30V的，P溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 89K |
| 代理商： | MMSF7P03HD |
MMSF7P03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
25
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
Vdc
Static DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 5.3 Adc)
(V
GS
= 4.5 Vdc, I
D
= 2.0 Adc)
R
DS(on)
26
42
35
50
m
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 2.5 Adc)
g
FS
12
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 24 Vdc, V
= 0 V,
f = 1.0 MHz)
C
iss
1200
1680
pF
Output Capacitance
C
oss
580
810
Transfer Capacitance
C
rss
160
220
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
(V
DD
= 15 Vdc, I
D
= 1.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 10 )
t
d(on)
23.5
47
ns
Rise Time
t
r
42.7
85.4
TurnOff Delay Time
t
d(off)
57.4
114.8
Fall Time
t
f
53.6
107.2
TurnOn Delay Time
(V
DD
= 15 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc, R
G
= 6.0 )
t
d(on)
16
32
Rise Time
t
r
15.2
30.6
TurnOff Delay Time
t
d(off)
99.7
199.4
Fall Time
t
f
55.2
110.4
Gate Charge
(See Figure 8)
(V
DS
= 10 Vdc, I
= 4.9 Adc,
V
GS
= 6.0 Vdc)
Q
T
37.9
75.8
nC
Q
1
4.2
Q
2
11.5
Q
3
7.6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc,
T
J
= 125
C)
V
SD
0.76
0.61
1.2
Vdc
Reverse Recovery Time
(I
S
= 4.9 Adc, V
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
47.9
ns
t
a
27
t
b
21
Reverse Recovery Stored Charge
Q
RR
0.052
C
2. Negative sign for PChannel device omitted for clarity.
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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