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參數(shù)資料
| 型號(hào)： | MMT08B350T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| 中文描述： | 400 V, 32 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | CASE 403C, SMT, SMB, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MMT08B350T3 |
MMT08B350T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range Blocking or Conducting State
T
J1
40 to +125
°
C
Overload Junction Temperature Maximum Conducting State Only
T
J2
+175
°
C
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ s, I
SC
= 1.0 A, Vdc = 1000 V)
(+65
°
C)
V
(BO)
400
412
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 k , t = 0.5 cycle) (Note 3)
(+65
°
C)
V
(BO)
400
412
V
Breakover Voltage Temperature Coefficient
dV
(BO)
/dT
J
0.12
V/
°
C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
V
(BR)
350
V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
A
OnState Voltage (I
T
= 1.0 A)
(PW
≤
300 s, Duty Cycle
≤
2%) (Note 3)
V
T
1.7
3.0
V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k )
Both polarities
I
BO
475
mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 V; I
T
(Initiating Current) =
1.0 A (+65
°
C)
I
H
150
130
270
mA
Critical Rate of Rise of OffState Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25
°
C)
dv/dt
2000
V/ s
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
C
O
20
42
25
45
pF
3. Measured under pulse conditions to reduce heating.
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol
I
D1
, I
D2
V
D1
, V
D2
V
BR
V
BO
I
BO
I
H
V
TM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMT08B350T3G | 功能描述:硅對(duì)稱二端開關(guān)元件 80A Surge 350V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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| MMT-102-01-F-DH | 制造商:Samtec Inc 功能描述:2MM SMT STRIPS - Bulk |
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