參數(shù)資料
型號(hào)： MPC2106ASG66
廠商： MOTOROLA INC
元件分類： SRAM
英文描述： 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
中文描述： 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178
文件頁(yè)數(shù)： 6/20頁(yè)
文件大?。?/td> 245K
代理商： MPC2106ASG66
MPC2105A
MPC2106A
MPC2105B
MPC2106B
6
MOTOROLA FAST SRAM
DATA RAM MCM69F618A SYNCHRONOUS TRUTH TABLE
(See Notes 1, 2, and 3)
STANDBY
ADSx
CNTENx
CWEx
CLKx
Address Used
Operation
H
L
X
X
L–H
N/A
Deselected
L
L
X
L
L–H
External Address
Write Cycle, Begin Burst
L
L
X
H
L–H
External Address
Read Cycle, Begin Burst
X
H
L
L
L–H
Next Address
Write Cycle, Continue Burst
X
H
L
H
L–H
Next Address
Read Cycle, Continue Burst
X
H
H
L
L–H
Current Address
Write Cycle, Suspend Burst
X
H
H
H
L–H
Current Address
Read Cycle, Suspend Burst
NOTES:
1. X means Don’t Care.
2. All inputs except CG must meet set–up and hold times for the low–to–high transition of clock (CLK0 – CLK4).
3. Wait states are inserted by suspending burst.
ASYNCHRONOUS TRUTH TABLE
(See Notes 1 and 2)
Operation
CG
I/O Status
Read
L
Data Out (DQ0 – DQ8)
Read
H
High–Z
Write
X
High–Z — Data In
Deselected
X
High–Z
NOTES:
1. X means Don’t Care.
2. For a write operation following a read operation, CG must be high before the input data
required set–up time and held high through the input data hold time.
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Data RAM
Tag
Iout
±
30
±
20
mA
Power Dissipation
MPC2105A/B
MPC2106A/B
PD
4.6
9.2
W
Temperature Under Bias
Tbias
– 10 to + 85
°
C
Operating Temperature
TA
0 to +70
°
C
Storage Temperature
Tstg
– 55 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will
ensure the output devices are in High–Z at
power up.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPC2106BSG66 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
MPC2106CDG66 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
MPC2106SG66 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
MPC2107SG15 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
MPC214G100 制造商:FDY 功能描述:AF421X100 SPECIAL .215 G120
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